XP10N3R8S Datasheet | YAGEO

Description AXP41600N43Rs8eriseesrieasrearfreominn Aodvvaatendceddes Pigonwearndinnsoilvicaotendprdoecseigsns atencdhnsoililcoogny ptoroaccehsisevteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde TO-263(S) ofans-tresswisitcahnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt edxetvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-220 package is widely preferred for all mercial- i Tnhdeus Ttr Oia-l263thrpoaucgkhagehoisle widaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l rinedsuisstatrniacle saunrfdacloewmpoaucnktagaeppcolicsat tcioonnstribuustinegtointfhrearewdorlrdewfliodwe pteocphunlaiqrupeacaknadges.uited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V3(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V3(Package Limited) ID@TC=100℃ Drain Current, VGS @ 10V Pulsed Drain Current1 PD@TC=25℃ PD@TA=25℃ EAS Total Power Dissipation Total Power Dissipation5 Single Pulse Avalanche Energy4 211 m J TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to...