Datasheet4U Logo Datasheet4U.com

XP10NA8R2LMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10NA8R2L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – XP10NA8R2LMT

Datasheet Details

Part number XP10NA8R2LMT
Manufacturer YAGEO
File Size 324.38 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10NA8R2LMT Datasheet
Additional preview pages of the XP10NA8R2LMT datasheet.

📁 Similar Datasheet

  • XP1000 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1000-BD - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1001 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1003 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1003-BD - Power Amplifier (Mimix Broadband)
  • XP1005 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1005-BD - Power Amplifier (MA-COM)
  • XP1006 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1006-FA - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1008 - GaAs MMIC Power Amplifier (Mimix Broadband)
Other Datasheets by YAGEO

Full PDF Text Transcription

Click to expand full text
XP10NA8R2LMT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G S Description XP10NA8R2L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 100V 8.
Published: |