XP10NA8R4H Datasheet | YAGEO

Description AXP41600N4A8s Re4riesseraieres afrroemin Anodvvaatnecdedde Psiogwnearnidnnsoilvicaotendprdoecseigsns atencdhnsoililcoogny ptoroacechssievteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde TO-252(H) ofans-tresswisitachnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt deextvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-220 package is widely preferred for all mercial- i Tn Odu-2s5tr2ial patchkroauggeh ishowleidelayppplriceafetirornesd. fo Trheall locwommtheerrcmiaal-l rinedsuisstatrniacle saunrfdacloewmpoaucnkat gaeppcolicsat tcioonnstribuustiengtointfhrearewdorlrdewfliodwe pteocphunlaiqrupeaacnkadgseu.ited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range +20 -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Value 1.8 62.5 Units ℃/W ℃/W 1 202311231YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time...