• Part: XP10NA8R4P
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 192.20 KB
Download XP10NA8R4P Datasheet PDF
YAGEO
XP10NA8R4P
XP10NA8R4P is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description AXP41600N4A8s Rer4iessearriesfraorme Aindnvoavnacteedd Pdoewsiegrninannodvasteildicodnespigrnocaensds steilcichonnolopgroycteossactheiechvenotlhoegylowtoesatcphoiesvseiblteheonl-orweseistapnocessaibnlde foans-t rsewsiitscthaincgepearnfodrmfaanscte.s Iwt itpcrhoivnigdespethrfeordmeasnigcnee. r Iwt ithpraonvideexstretmhe deeffsicigiennetrdwevitihceanforeuxtsremineaewffidcieenrat ndgeeviocfepfoowr eursaepipnliacawtioidnes.range of power applications. The TO-220 package is widely preferred for all mercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID 100V 8.4mΩ 66A G DS TO-220(P) Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range +20 125 m J -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 1.8 62 Units ℃/W ℃/W 1 202311231YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source...