XP10NB2R5WL
XP10NB2R5WL is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10NB2R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-247 package is widely preferred for mercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
BVDSS RDS(ON)
100V 2.5mΩ
TO-247 (WL)
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TC=25℃
Drain Current, VGS @ 10V5(Silicon Limited)
ID@TC=25℃
Drain Current, VGS @ 10V5(Package Limited)
ID@TC=100℃ IDM
Drain Current, VGS @ 10V Pulsed Drain Current1
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃ EAS
Total Power Dissipation Single Pulse Avalanche Energy3
500 m J
TSTG
Storage Temperature Range
-55 to...