• Part: XP10NB2R5WL
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 739.00 KB
Download XP10NB2R5WL Datasheet PDF
YAGEO
XP10NB2R5WL
XP10NB2R5WL is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description XP10NB2R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-247 package is widely preferred for mercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. BVDSS RDS(ON) 100V 2.5mΩ TO-247 (WL) Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V5(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V5(Package Limited) ID@TC=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 PD@TC=25℃ Total Power Dissipation PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy3 500 m J TSTG Storage Temperature Range -55 to...