XP10NB3R4LCMT
XP10NB3R4LCMT is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10NB3R4LC series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
BVDSS
RDS(ON)
100V 3.4mΩ
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
+20
ID@TC=25℃
Drain Current, VGS @ 10V5(Silicon Limited)
ID@TC=25℃
Drain Current, VGS @ 10V5(Package Limited)
ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain Current , VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy6
Storage Temperature Range
Operating Junction Temperature Range
200 m J
-55 to 150
℃
-55 to 150
℃
Thermal...