• Part: XP10NB3R4LCMT
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 362.86 KB
Download XP10NB3R4LCMT Datasheet PDF
YAGEO
XP10NB3R4LCMT
XP10NB3R4LCMT is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description XP10NB3R4LC series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 100V 3.4mΩ PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V5(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V5(Package Limited) ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain Current , VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy6 Storage Temperature Range Operating Junction Temperature Range 200 m J -55 to 150 ℃ -55 to 150 ℃ Thermal...