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XP10TN135H Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: YAGEO

Overview: XP10TN135H Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free.

Datasheet Details

Part number XP10TN135H
Manufacturer YAGEO
File Size 177.20 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet XP10TN135H-YAGEO.pdf

General Description

XP10TN135 series innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

BVDSS RDS(ON) ID 100V 135mΩ 8.1A G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.

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