XP10TN135H Datasheet | YAGEO

Description XP10TN135 series innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 100V 135mΩ 8.1A TO-252(H) The TO-252 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range +20 8 m J -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 6 Units ℃/W ℃/W 1 202310161YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source...