XP10TN135JB
XP10TN135JB is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-251S short lead package is preferred for all mercialindustrial through-hole applications without lead-cutted.
BVDSS RDS(ON) ID
100V 135mΩ
8.1A
GD S
TO-251S(JB)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range
+20
8 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 6
Units ℃/W ℃/W
1 202311231YAGEO
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max....
