Datasheet4U Logo Datasheet4U.com

XP10TN135JB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – XP10TN135JB

Datasheet Details

Part number XP10TN135JB
Manufacturer YAGEO
File Size 142.94 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10TN135JB Datasheet
Additional preview pages of the XP10TN135JB datasheet.

📁 Similar Datasheet

  • XP1000 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1000-BD - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1001 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1003 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1003-BD - Power Amplifier (Mimix Broadband)
  • XP1005 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1005-BD - Power Amplifier (MA-COM)
  • XP1006 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1006-FA - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1008 - GaAs MMIC Power Amplifier (Mimix Broadband)
Other Datasheets by YAGEO
  • XP10TN135J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN135H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN135K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN135M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN135N - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN010CMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN028MT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP10TN028YT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP10TN135JB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 100V 135mΩ 8.
Published: |