XP18P10GK
Description
XP18P10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching
G performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.
-100V 160mΩ
-3.1A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Drain-Source Voltage
-100
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
+20 -3.1 -2.5 -10 2.5 -55 to 150
Operating Junction Temperature Range
-55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 45
Unit ℃/W
1 202311272YAGEO
Electrical Characteristics@Tj=25o C(unless...
