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XP18P10GM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP18P10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – XP18P10GM

Datasheet Details

Part number XP18P10GM
Manufacturer YAGEO
File Size 239.93 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP18P10GM Datasheet
Additional preview pages of the XP18P10GM datasheet.

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Full PDF Text Transcription

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XP18P10GM Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G S S S Description XP18P10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G -100V 180mΩ -2.
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