Datasheet4U Logo Datasheet4U.com

XP2314GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

XP2314 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet Details

Part number XP2314GN
Manufacturer YAGEO
File Size 181.95 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2314GN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP2314GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free S SOT-23 G Description XP2314 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 20V 75mΩ 3.