XP2318GEN
Description
XP2318 series are innovated design and silicon process technology
G to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
30V 1.5Ω 500m A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 4V Drain Current3, VGS @ 4V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 ±16 0.5 0.4
2 0.7 0.006
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol...
