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XP2318GEN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

performance.

device for use in a wide range of power applications.

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Datasheet Details

Part number XP2318GEN
Manufacturer YAGEO
File Size 183.16 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2318GEN Datasheet

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Full PDF Text Transcription (Reference)

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XP2318GEN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device ▼ RoHS Compliant D BVDSS RDS(ON) S ID SOT-23 G Description XP2318 series are innovated design and silicon process technology G to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 30V 1.