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XP2531GY - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP2531 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP2531GY
Manufacturer YAGEO
File Size 435.00 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2531GY Datasheet
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Full PDF Text Transcription

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XP2531GY Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free S1 D1 SOT-26 D2 G2 S2 G1 Description XP2531 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercialindustrial applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 16V 58mΩ 3.5A -16V 125mΩ -2.5A D2 S2 Absolute Maximum Ratings@Tj=25oC.
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