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XP2535GEY - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP2535 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP2535GEY
Manufacturer YAGEO
File Size 252.94 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP2535GEY Datasheet
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Full PDF Text Transcription

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XP2535GEY Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge D2 S1 D1 ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SOT-26 G2 S2 G1 Description XP2535 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for commercial surface mount applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 20V 32mΩ 4.6A -20V 80mΩ -3.
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