XP30T10GH
Description
XP30T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all mercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
100V 55mΩ
19A
TO-252(H)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
+20
-55 to 150
℃
-55 to 150
℃
Thermal...
