XP30T10GM
Description
XP30T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast
G switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
100V 55mΩ 4.5A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value...
