XP3832CDT
Description
G2 S2
XP3832 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power
G2 D2/S1
S2
G2 D2/S1 D2/S1 D2/S1 applications.
The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. The package provide optimal efficiency with low stray inductance and very low on-
D1
G1 D2/S1 D1 D1
G1 D2/S1
D1
D1
PDFN 5x6 resistance.
PDFN 5x6
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
CH-1
CH-2
Drain-Source Voltage
Gate-Source Voltage
+20
+20
ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS
Drain Current (Package Limited) Drain Current , VGS @ 10V3 Drain Current , VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation3 Single Pulse Avalanche...
