• Part: XP3832CMT
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 778.35 KB
Download XP3832CMT Datasheet PDF
YAGEO
XP3832CMT
Description G2 S2 XSemi MOSFETs provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G2 D2/S1 S2 G2 D2/S1 D2/S1 D2/S1 The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. The package provide optimal efficiency with low stray inductance and very low onresistance. D1 G1 D2/S1 D1 D1 G1 D2/S1 D1 D1 PMPAK® 5x6 PMPAK 5x6 Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified) Symbol Parameter Rating Units CH-1 CH-2 Drain-Source Voltage Gate-Source Voltage +20 +20 ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS Drain Current (Package Limited) Drain Current , VGS @ 10V3 Drain Current , VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation3 Single Pulse Avalanche Energy6 32 m J TSTG Storage Temperature Range -55 to 150 ℃ Operating Junction...