XP3A020Y
Description
XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1
The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.
BVDSS RDS(ON) ID3
D1 G2
S1
30V 20mΩ 6.5A
D2
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
+20
7.2 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 90
Unit ℃/W
1...
