XP3A020YT
Description
S1 G1 S2 G2
PMPAK® 3 x 3
XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1
The PMPAK® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
BVDSS RDS(ON) ID3
D1 G2
S1
30V 20mΩ 8.7A
D2
S2
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
+20
7.2 m J
-55 to 150
℃
-55 to...
