• Part: XP3N2R1H
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 180.19 KB
Download XP3N2R1H Datasheet PDF
YAGEO
XP3N2R1H
Description AXP436N024R1sesrieersiesarearefroimnno Avdavtaendceddes Pigonwearndinnsoilvicaotnedprdoecseigsns TO-252(H) atencdhnsoililcoogny ptoroaccehsisevteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde ofans-tresswisitcahnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt edxetvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-220 package is widely preferred for all mercial- i Tn Odu-2s5tr2ial patchkroauggeh ishowleidelayppplriceafetirornesd. fo Trheall locwommtheerrcmiaal-l rinedsuisstatrniacle saunrfdacloewmpoaucnktagaeppcolicsat tcioonnstribuustinegtointfhrearewdorlrdewfliodwe pteocphunlaiqrupeacaknadges.uited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM...