XP3N2R1P
Description
AXP436N024R1sesrieersiesarearefroimnno Avdavtaendceddes Pigonwearndinnsoilvicaotnedprdoecseigsns atencdhnsoililcoogny ptoroaccehsisevteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde ofans-tresswisitcahnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt edxetvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-220 package is widely preferred for all mercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON)
30V 2.1mΩ
TO-220(P)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Drain Current, VGS @...
