XP4575GM
Description
XP4575 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS
RDS(ON)
ID BVDSS RDS(ON) ID
D1
60V 36mΩ
6A -60V 72mΩ -4.2A
D2
G1
G2
The SO-8 package is widely preferred for all mercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch
S1
S2 applications.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
-60
+20
+20
-4.2
-3.3
-30
V V A A A W...
