• Part: XP4578GM
  • Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 229.84 KB
Download XP4578GM Datasheet PDF
YAGEO
XP4578GM
Description XP4578 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 60V 64mΩ 4.5A -60V 125mΩ -3A D2 The SO-8 package is widely preferred for all mercial- G1 G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch S1 S2 applications. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel Drain-Source Voltage -60 VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 ±20 ±20 -3 -2.4 -20 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature...