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XP4955GM - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

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Datasheet Details

Part number XP4955GM
Manufacturer YAGEO
File Size 242.08 KB
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP4955GM Datasheet

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Full PDF Text Transcription

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XP4955GM Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID -20V 45mΩ -5.6A XP4955 series are innovated design and silicon process D1 D2 technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power G1 G2 applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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