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XP4957GM - DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP4957 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP4957GM
Manufacturer YAGEO
File Size 206.33 KB
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP4957GM Datasheet

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Full PDF Text Transcription

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XP4957GM Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual P MOSFET Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description XP4957 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 -30V 24mΩ -7.
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