XP4N2R6H
Description
AXP46N024R6sesreierisesaraerefrforomm AAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design and silicon process technology to achieve the lowest possible
TO-252(H) on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all mercial- i Tn Odu-2s5tr2ial patchkroauggeh ishowleidelayppplriceafetirornesd. fo Trheall locwommtheerrcmiaal-l rinedsuisstatrniacle saunrfdacloewmpoaucnktagaeppcolicsat tcioonnstribuustinegtointfhrearewdorlrdewfliodwe pteocphunlaiqrupeacaknadges.uited for high current application due to the low connection resistance.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4(Silicon Limited) Drain Current, VGS @ 10V4 Pulsed Drain...
