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XP4N2R6H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

on-resistance and fast switching performance.

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Datasheet Details

Part number XP4N2R6H
Manufacturer YAGEO
File Size 217.69 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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XP4N2R6H Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S BVDSS RDS(ON) 40V 2.6mΩ Description AXP46N024R6sesreierisesaraerefrforommAAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design and silicon process technology to achieve the lowest possible G D S TO-252(H) on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- iTnOdu-2s5tr2ial patchkroauggeh ishowleidelayppplriceafetirornesd.
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