Datasheet Details
| Part number | XP4N2R6I-A |
|---|---|
| Manufacturer | YAGEO |
| File Size | 256.36 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP4N2R6I-A-YAGEO.pdf |
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Overview: XP4N2R6I-A Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free.
| Part number | XP4N2R6I-A |
|---|---|
| Manufacturer | YAGEO |
| File Size | 256.36 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP4N2R6I-A-YAGEO.pdf |
|
|
|
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BVDSS RDS(ON) ID 45V 2.68mΩ 80A GD S TO-220CFM(I) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range 45 V +20 V 80 A 50.8 A 300 A 31.2 W 1.92 W 80 mJ -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 4 65 Units ℃/W ℃/W 1 202311171YAGEO XP4N2R6I-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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