Datasheet4U Logo Datasheet4U.com

XP65AN1K2IN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP65AN1K2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – XP65AN1K2IN

Datasheet Details

Part number XP65AN1K2IN
Manufacturer YAGEO
File Size 197.16 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP65AN1K2IN Datasheet
Additional preview pages of the XP65AN1K2IN datasheet.

📁 Similar Datasheet

  • XP6501 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6534 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
  • XP6111 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6112 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6113 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6114 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6115 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6116 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP611FH - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
  • XP6210 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Other Datasheets by YAGEO
  • XP65AN1K2I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN1K2IT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN1K2J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN1K2P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN1K2S - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN2K5H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN2K5I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • XP65AN2K5IN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
XP65AN1K2IN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP65AN1K2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 650V 1.
Published: |