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XP65AN1K2S - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP65AN1K2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – XP65AN1K2S

Datasheet Details

Part number XP65AN1K2S
Manufacturer YAGEO
File Size 254.23 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP65AN1K2S Datasheet
Additional preview pages of the XP65AN1K2S datasheet.

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Full PDF Text Transcription

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XP65AN1K2S Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP65AN1K2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID3 650V 1.
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