XP6NA6R5IT
Description
XP6NA6R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID
60V 6.5mΩ
49A
G DS
TO-220CFM-T(IT)
The TO-220CFM package is widely preferred for all mercial-industrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature...
