XP6NA6R5M
Description
XP6NA6R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all mercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
BVDSS RDS(ON) ID3
60V 6.5mΩ
15A D
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Drain-Source Voltage
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
+20 15 12 50 2.5 31.2 -55 to 150
Operating Junction Temperature Range
-55 to 150
Units V V A A A W m J ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal...
