DESCRIPTION
XP6NA6R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID3 G 60V 6.5mΩ 15A D S ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VDS Drain-Source Voltage 60 VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range +20 15 12 50 2.5 31.2 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Units V V A A A W mJ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 50 Unit ℃/W 1 202401191YAGEO XP6NA6R5M ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(O...
YAGEO
