Datasheet Details
| Part number | XP9565BGH |
|---|---|
| Manufacturer | YAGEO |
| File Size | 209.78 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP9565BGH-YAGEO.pdf |
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Overview: XP9565BGH Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G.
| Part number | XP9565BGH |
|---|---|
| Manufacturer | YAGEO |
| File Size | 209.78 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP9565BGH-YAGEO.pdf |
|
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|
XSemi MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
BVDSS RDS(ON) ID -40V 52mΩ -17A G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -40 V +20 V -17 A -11 A -60 A 25 W 0.2 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 5.0 62.5 Units ℃/W ℃/W 1 202312203YAGEO XP9565BGH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Static Drain-Source On-Resistance2 VGS=-10V, ID=-8A VGS=-4.5V, ID=-6A Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-10V, ID=-8A Drain-Source Leakage Current VDS=-40V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=-32V, VGS=0V Gate-Source Leakage Total Gate Charge2 VGS= +20V, VDS=0V ID=-8A Gate-Source Charge VDS=-32V Gate-Drain ("Miller") Charge Turn-on Delay Time2 VGS=-4.5V VDS=-20V Rise Time ID=-8A Turn-off Delay Time RG=3.3Ω Fall Time VGS=-10V Input Capacitance VGS=0V Outp
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