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XP9960GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

fast switching performance.

applications.

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Datasheet Details

Part number XP9960GM
Manufacturer YAGEO
File Size 213.98 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9960GM Datasheet

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Full PDF Text Transcription

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XP9960GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 40V 20mΩ 7.8A Description XP9960 series are innovated design and silicon process D1 D2 technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power G1 G2 applications. S1 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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