XP9963GP
Description
XP9963 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all mercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON)
40V 4mΩ 160A
TO-220(P)
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current (Chip) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
+20
-55 to 175
℃
-55 to 175
℃
Thermal Data
Symbol
Parameter...
