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XP9975GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP9975 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP9975GM
Manufacturer YAGEO
File Size 208.10 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP9975GM Datasheet

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Full PDF Text Transcription

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XP9975GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description XP9975 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 60V 21mΩ 7.
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