Datasheet Summary
N-Channel
Enhancement Mode Power MOSFET
Features
- VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ；
- Low gate charge
- Low Crss (typical 197pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Rohs product
Product Summary
BVDSS typ. RDS(ON) typ. max. ID
4 6 120
V mΩ mΩ A
100% UIS TESTED!
Application
- High efficiency switch mode power supplies
- UPS
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
TO-220-3L
Reel Size
- Tape width
- Quantity
- Table 1....