YMP230N55 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The YMP230N55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

VDS=55V；ID=230A@ V GS =10V； RDS(ON)< 3 mΩ @ VGS =10V.
Special process technology for high ESD capability.
Special designed for Convertors and power controls.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation 100% UIS TESTED!.

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YMP230N55 N-Channel Enhancement Mode Power MOSFET by YM - Datasheet Preview — Datasheet preview – YMP230N55

Datasheet Details

Part number	YMP230N55
Manufacturer	YM
File Size	1.68 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	YMP230N55 Datasheet
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Full PDF Text Transcription

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YMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary BVDSS RDS(ON) typ. typ. max. ID 55 2 3 230 V mΩ mΩ A General Description The YMP230N55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Published: Mar 25, 2014 |