YJS12G06A
Description
Split Gate Trench Power MV MOSFET technology - Low RDS(ON) - Low Gate Charge - Optimized for fast-switching applications.
Applications
- Industrial and Motor Drive application
- Part: YJS12G06A
- Description: N-Channel Enhancement Mode Field Effect Transistor
- Category: Transistor
- Manufacturer: Yangjie Electronic
- Size: 572.54 KB