Datasheet Details
| Part number | YJS12G06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 572.54 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJS12G06A-YangzhouYangjie.pdf |
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Overview: YJS12G06A RoHS PLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.5V) ●100% UIS Tested 100% Rg Tested 100% ▽VDS Tested 60V 12A ＜9.0mΩ ＜13.
| Part number | YJS12G06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 572.54 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJS12G06A-YangzhouYangjie.pdf |
|
|
|
●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications Applications ●Synchronus Rectification in DC/DC and AC/DC Converters ●Industrial and Motor Drive application ■Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Voltage VGS Drain Current G TC=25℃ ID TC=100℃ Pulsed Drain Current C IDM Avalanche energy L=0.5mH C EAS Power Dissipation A TC=25℃ TC=100℃ Junction and Storage Temperature Range Thermal Characteristics PDSM TJ ,TSTG Parameter Junction-to-Ambient A Junction-to-Ambient A D T≤10s Steady-State Symbol RθJA Junction-to-Case Steady-State RθJC ■Ordering Information (Example) Maximum 60 ±20 12 9 48 195 3.1 2.0 -55～+150 Typ.
30 58 15 Max.
40 75 24 Unit V V A A mJ W ℃ Unit ℃/ W ℃/ W ℃/ W PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJS12G06A 4000 Tape & reel S-S1640 Rev.1.0,3-July-18 1/7 Yangzhou Yangjie Electronic Technology Co., Ltd.
| Part Number | Description |
|---|---|
| YJS12G06D | N-Channel Enhancement Mode Field Effect Transistor |
| YJS15G10B | N-Channel Enhancement Mode Field Effect Transistor |
| YJS05GP10A | P-Channel Enhancement Mode Field Effect Transistor |