YJS12G06D - N-Channel Enhancement Mode Field Effect Transistor

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Description

Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless otherw

Yangzhou Yangjie

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Part number	YJS12G06D
Manufacturer	Yangzhou Yangjie
File Size	1.19 MB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJS12G06D Datasheet
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YJS12G06D RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 12A ＜8.5 mohm ＜12 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) TA=25℃ TA=100℃ 12 ID A 7.5 Pulsed Drain Current A IDM 48 A Avalanche energy B EAS 132 mJ Total Power Dissipation C PD 3.

Published: Nov 10, 2024 |