Datasheet Details
| Part number | YJS12G06D |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJS12G06D-YangzhouYangjie.pdf |
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Overview: YJS12G06D RoHS PLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 12A ＜8.
| Part number | YJS12G06D |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJS12G06D-YangzhouYangjie.pdf |
|
|
|
● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) TA=25℃ TA=100℃ 12 ID A 7.5 Pulsed Drain Current A IDM 48 A Avalanche energy B EAS 132 mJ Total Power Dissipation C PD 3.1 W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Thermal Resistance Junction-to-Ambient D Thermal Resistance Junction-to-Ambient D t≤10S Steady-State Symbol RθJA Typ Max Units 31 40 59 75 ℃/W Thermal Resistance Junction-to-Case Steady-State RθJL 16 24 ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking YJS12G06D F2 Q12G06D MINIMUM PACKAGE(pcs) 4000 INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 8000 64000 13“ reel S-E141 Rev.1.1,22-Jun-21 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
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YJS12G06D ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 V Zero Gate Voltage Drain Current TJ=25℃ IDSS VDS=60V,VGS=0V TJ=55℃ 1 μA 5 Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.2 1.7 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=12A VGS= 4.5V, ID=10A 6.8 8.5 mΩ 8.3 12 Diode Forward Voltage VSD IS=12A,VGS=0V 0.85 1.3 V
| Part Number | Description |
|---|---|
| YJS12G06A | N-Channel Enhancement Mode Field Effect Transistor |
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