Datasheet Details
| Part number | YJS12G06D |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJS12G06D Datasheet
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| Part number | YJS12G06D |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJS12G06D Datasheet
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Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) TA=25℃ TA=100℃ 12 ID A 7.5 Pulsed Drain Current A
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