YJS12G06D - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Split Gate Trench MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
Applications
DC-DC Converters
Power management functions
Industrial and Motor Drive application
Absolute Maximum Ratings (TA=25℃unless otherw
P-Channel Enhancement Mode Field Effect Transistor
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YJS12G06D
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested
60V 12A ＜8.5 mohm ＜12 mohm
General Description
● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON)
Applications
● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
60
V
Gate-source Voltage
VGS
±20
V
Drain Current (Silicon limited)
TA=25℃ TA=100℃
12
ID
A
7.5
Pulsed Drain Current A
IDM
48
A
Avalanche energy B
EAS
132
mJ
Total Power Dissipation C
PD
3.
YJS12G06D Datasheet
