YJS12G06D Overview
pulse width limited by max. VDD=50V, RG=25Ω, L=0.5mH, IAS=23A,. junction temperature, using ≤10s junction-ambient.
YJS12G06D Details
| Part number | YJS12G06D |
|---|---|
| Datasheet | YJS12G06D Datasheet PDF (Download) |
| File Size | 1.19 MB |
| Manufacturer | Yangjie Electronic |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
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