SI3401 Datasheet PDF

DONGGUAN ZHONGGUI ELECTRONICS CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SI3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability D MARKING: R1 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG G S Value -30 ±12 -4.2 350 357 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V On characteristics Drain-source on-resistance (note 1) RDS(on) VGS =-10...