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DONGGUAN ZHONGGUI ELECTRONICS CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
D
MARKING: R1
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature
Symbol VDS VGS ID PD RθJA TJ TSTG
G S
Value -30 ±12 -4.