| Part Number | SI3401 Datasheet |
|---|---|
| Manufacturer | HAOHAI |
| Overview |
-3.8A,-30VP
P P-Channel Enhancement-Mode MOS FETs
Features ■-30V, -3.8A, RDS(ON)=50mΩ @ VGS=-10V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is a.
*-30V, -3.8A, RDS(ON)=50mΩ @ VGS=-10V *High dense cell design for extremely low RDS(ON) *Rugged and reliable *Lead free product is acquired *SOT-23 Package *Marking Code: B1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 HPM3401 P-Channel MOSFETs HPM3401 P-Chan. |
SI3401 Datasheet and Specifications PDF
The SI3401 is a P-Channel Enhancement-Mode MOSFETs.
| Part Number | SI3401 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Micro Commercial Components |
| Overview |
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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SI3401
Features
• Lead Free Finish/RoHS Compli.
* Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) * Epoxy meets UL 94 V-0 flammability rating * Moisture Sensitivity Level 1 * High dense cell design for extremely low RDS(ON) * Exceptional on-resistance and maximum DC current capability * Lead free p. |
| Part Number | SI3401 Datasheet |
|---|---|
| Description | FULLY-INTEGRATED 802.3-COMPLIANT PD INTERFACE AND SWITCHING REGULATOR |
| Manufacturer | Silicon Labs |
| Overview | The Si3400 and Si3401 integrate all power management and control functions required in a Power-over-Ethernet (PoE) powered device (PD) application. The Si3400 and Si3401 convert the high voltage suppl. IEEE 802.3 standard-compliant solution, including pre-standard (legacy) PoE support Highly-integrated IC enables compact solution footprints Minimal external components Integrated diode bridges and transient surge suppressor Integrated switching regulator controller with on-chip power FET Integrated. |
| Part Number | SI3401 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | ZHONGGUI |
| Overview | DONGGUAN ZHONGGUI ELECTRONICS CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SI3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON). z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability D MARKING: R1 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation. |