• Part: BS107P
  • Description: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • Manufacturer: Zetex Semiconductors
  • Size: 20.34 KB
Download BS107P Datasheet PDF
Zetex Semiconductors
BS107P
FEATURES - 200 Volt VDS - RDS(on)=23Ω REFER TO BS107PT FOR GRAPHS E-Line TO92 patible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V m W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 10 30 1 23 30 MAX. UNIT V n A n A µA Ω Ω CONDITIONS. ID=100µA, VGS=0V VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=25m A- VGS=5V, ID=100m A- - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤...