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BS107P - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features

  • 200 Volt VDS.
  • RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C.

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Datasheet preview – BS107P

Datasheet Details

Part number BS107P
Manufacturer Zetex Semiconductors
File Size 20.34 KB
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Datasheet download datasheet BS107P Datasheet
Additional preview pages of the BS107P datasheet.

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Other Datasheets by Zetex Semiconductors
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Full PDF Text Transcription

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 10 30 1 23 30 MAX. UNIT V nA nA µA Ω Ω CONDITIONS.
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