• Part: BS107PT
  • Description: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • Manufacturer: Zetex Semiconductors
  • Size: 83.21 KB
Download BS107PT Datasheet PDF
Zetex Semiconductors
BS107PT
FEATURES - 200 Volt VDS - RDS(on)=28Ω E-Line TO92 patible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 MAX. UNIT V CONDITIONS. ID=100µA, VGS=0V VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=20m A- VGS=2.7V, ID=100m A- 10 30 1 28 30 n A n A µA Ω Ω - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-24 TYPICAL CHARACTERISTICS ID(On) - On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) 1.0 0.8 0.6 0.4...