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FCX1147A - PNP SILICON POWER (SWITCHING) TRANSISTOR

Key Features

  • FCX1147A C.
  • 2W POWER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1147A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 53mΩ at 3A FCX1047A 147 E C B Complimentary Type Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -15 -12 -5 -20 -3 -500 1 † 2 ‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.