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FCX658A - NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Key Features

  • 400 Volt VCEO.
  • 0.5 Amp continuous current.
  • Ptot=1 Watt.
  • Optimised hfe characterised upto 200mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – NOVEMBER 2000 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA APPLICATIONS * Telephone dialler circuits * Hook switches for modems * Predrivers within HID lamp ballasts * (SLIC) Subscriber Line Interface Cards Partmarking Detail - 65A FCX658A C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 400 400 5 1 500 1 5.