Kexin Electronics FCX658A
NPN Silicon Planar Medium Power High Voltage Transistor
FCX658A Specifications
- Max Collector Current : 500mA
- Terminals : 3
- Collector Emitter Voltage : 400V
- Max Power Dissipation : 1W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | FCX658A |
|---|---|
| Datasheet | FCX658A Download |
| Manufacturer | Kexin Electronics |
| Description | NPN Silicon Planar Medium Power High Voltage Transistor |
| Buy | Stock & Price |
FEATURES
400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mAABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 derate above 25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 400 400 5 1 500 1 5.7 -55 to +150 Unit V V V A mA W mW/ 1 SMD Type Transistors FCX658AELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching times Symbol V(BR)CBO V(BR)CEO) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff Testcon...