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FMMT449 - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Key Features

  • Low equivalent on-resistance; RCE(sat) 250mΩ at 1A.

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FMMT4400 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMT549 449 FMMT449 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range PARAMETER SYMBOL SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT VALUE 50 30 5 2 1 200 500 -55 to +150 CONDITIONS. UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MIN. MAX. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 50 30 5 0.1 10 0.1 0.5 1.0 1.25 1.