FMMTL618 Datasheet | Zetex Semiconductors

FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A PLEMENTARY TYPE - PARTMARKING DETAIL - FMMTL718 L68 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 60 20 5 1.25 4 200 500 -55 to +150 UNIT V V V A A m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 60 20 5 TYP. 105 30 8.5 10 10 10 18 80 130 170 260 1000 850 200 300 250 200 100 50 400 440 400 300 190 100 195 9 72 388 12 MHz p F ns ns 35 160 200 280 350 1100 1000 MAX. UNIT V V V n A n A n A m V m V m V m V m V m V m V CONDITIONS. IC=100µA IC=10m A- IE=100µA VCB=16V VEB=4V VCE=16V IC=100m A, IB=10m A- IC=500m A, IB=25m A- IC=1A, IB=100m A- IC=1.25A, IB=100m A- IC=2A, IB=200m A- IC=1.25A, IB=100m A- IC=1.25A, VCE=2V- IC=10m A, VCE=2V IC=200m A, VCE=2V- IC=500m A, VCE=2V- IC=1A, VCE=2V- IC=2A, VCE=2V- IC=3A, VCE=2V- IC=50m A, VCE=10V f=100MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=-IB2=10m A Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCE(sat) Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) h FE Transition Frequency Collector-Base Breakdown Voltage Switching times f T Cobo ton toff - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% TYPICAL CHARACTERISTICS +25°C IC/IB=10 300m 300m VCE(sat) - (V) VCE(sat) - (V) 200m IC/IB=10 IC/IB=20 IC/IB=50 200m -55°C +25°C +100°C 100m 100m 0 1m A 0 10m A 100m A 1A IC - Collector Current (A) 10A 1m 10m 100m 1A 10A VCE(sat) v IC - Collector Current (A) VCE(sat) v IC VCE=2V 1.0...