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FMMTL618 - NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Features

  • Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A.

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Full PDF Text Transcription

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SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL718 L68 FMMTL618 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 60 20 5 1.25 4 200 500 -55 to +150 UNIT V V V A A mA mW °C FMMTL618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 60 20 5 TYP. 105 30 8.
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