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FMMTL619 - NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Features

  • Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A.

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Full PDF Text Transcription

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SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL720 L69 FMMTL619 C B SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE 100 50 5 1.25 2 200 500 -55 to +150 UNIT V V V A A mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FMMTL619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 100 50 5 TYP.
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